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IKW50N60T trenchstop ? series q ifag ipc td vls 1 rev. 2.6 20.09.2013 low loss duopack : igbt in trenchstop ? and fieldstop technology with soft, fast recovery anti-parallel emitter controlled he diode features: ? very low v ce(sat) 1.5v (typ.) ? maximum junction temperature 175c ? short circuit withstand time 5 ? s ? designed for : - frequency converters - uninterrupted power supply ? trenchstop ? and fieldstop technology for 600v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed ? positive temperature coefficient in v ce(sat) ? low emi ? low gate charge ? very soft, fast recovery anti-parallel emitter controlled he diode ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking package IKW50N60T 600v 50a 1.5v 175 ? c k50t60 pg-to247-3 maximum ratings parameter symbol value unit collector-emitter voltage, t j 2 5 ? c v c e 600 v dc collector current, limited by t jmax t c = 25 ? c t c = 100 ? c i c 80 2) 50 a pulsed collector current, t p limited by t jmax i c p u l s 150 turn off safe operating area, v ce = 600v, t j = 175 ? c, t p = 1s - 150 diode forward current, limited by t jmax t c = 25 ? c t c = 100 ? c i f 100 50 diode pulsed current, t p limited by t jmax i f p u l s 150 gate-emitter voltage v g e ? 20 v short circuit withstand time 3) v ge = 15v, v cc ? 400v, t j ? 150 ? c t s c 5 ? s power dissipation t c = 25 ? c p t o t 333 w operating junction temperature t j -40...+175 ? c storage temperature t s t g -55...+150 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1 j-std-020 and jesd-022 2) value limited by bond wire 3) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to247-3
IKW50N60T trenchstop ? series q ifag ipc td vls 2 rev. 2.6 20.09.2013 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r t h j c 0.45 k/w diode thermal resistance, junction ? case r t h j c d 0.8 thermal resistance, junction ? ambient r t h j a 40 electrical characteristic, at t j = 25 ? c, unless otherwise specified parameter symbol conditions value unit min. typ. max. static characteristic collector-emitter breakdown voltage v ( b r ) c e s v g e = 0v , i c = 0 .2m a 600 - - v collector-emitter saturation voltage v c e ( s a t ) v g e = 15 v , i c = 50 a t j =2 5 ? c t j =1 7 5 ? c - - 1.5 1.9 2 - diode forward voltage v f v g e = 0v , i f = 5 0 a t j =2 5 ? c t j =1 7 5 ? c - - 1.65 1.6 2.05 - gate-emitter threshold voltage v g e ( t h ) i c = 0. 8m a, v c e = v g e 4.1 4.9 5.7 zero gate voltage collector current i c e s v c e = 60 0 v , v g e = 0v t j =2 5 ? c t j =1 7 5 ? c - - - - 40 3500 a gate-emitter leakage current i g e s v c e = 0v , v g e =2 0 v - - 100 na transconductance g f s v c e = 20 v , i c = 50 a - 31 - s integrated gate resistor r g i n t - dynamic characteristic input capacitance c i s s v c e = 25 v , v g e = 0v , f = 1 mh z - 3140 - pf output capacitance c o s s - 200 - reverse transfer capacitance c r s s - 93 - gate charge q g a t e v c c = 48 0 v, i c =5 0 a v g e = 15 v - 310 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh short circuit collector current 1) i c ( s c ) v g e = 15 v , t s c ? 5 ? s v c c = 4 0 0 v, t j ? 1 50 ? c - 458.3 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
IKW50N60T trenchstop ? series q ifag ipc td vls 3 rev. 2.6 20.09.2013 switching characteristic, inductive load, at t j =25 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn-on delay time t d ( o n ) t j = 2 5 ? c , v c c = 4 0 0 v , i c = 5 0 a , v g e = 0 / 1 5 v , r g = 7 ? , l ? = 1 0 3 n h , c ? = 3 9 p f l ? , c ? f r o m f i g . e energy losses include ?tail? and diode reverse recovery. - 26 - ns rise time t r - 29 - turn-off delay time t d ( o f f ) - 299 - fall time t f - 29 - turn-on energy e o n - 1.2 - mj turn-off energy e o f f - 1.4 - total switching energy e t s - 2.6 - anti-parallel diode characteristic diode reverse recovery time t r r t j =2 5 ? c , v r = 4 00 v , i f = 5 0 a, d i f / d t =1 2 80 a / ? s - 143 - ns diode reverse recovery charge q r r - 1.8 - c diode peak reverse recovery current i r r m - 27.7 - a diode peak rate of fall of reverse recovery current during t b d i r r /d t - 671 - a/ ? s switching characteristic, inductive load, at t j =175 ? c parameter symbol conditions value unit min. typ. max. igbt characteristic turn-on delay time t d ( o n ) t j = 1 7 5 ? c , v c c = 4 0 0 v , i c = 5 0 a , v g e = 0 / 1 5 v , r g = 7 ? , l ? = 1 0 3 n h , c ? = 3 9 p f l ? , c ? f r o m f i g . e energy losses include ?tail? and diode reverse recovery. - 27 - ns rise time t r - 33 - turn-off delay time t d ( o f f ) - 341 - fall time t f - 55 - turn-on energy e o n - 1.8 - mj turn-off energy e o f f - 1.8 - total switching energy e t s - 3.6 - anti-parallel diode characteristic diode reverse recovery time t r r t j =1 7 5 ? c v r = 4 00 v , i f = 5 0 a, d i f / d t =1 2 80 a / ? s - 205 - ns diode reverse recovery charge q r r - 4.3 - c diode peak reverse recovery current i r r m - 40.7 - a diode peak rate of fall of reverse recovery current during t b d i r r /d t - 449 - a/ ? s
IKW50N60T trenchstop ? series q ifag ipc td vls 4 rev. 2.6 20.09.2013 i c , c o l l e c t o r c u r r e n t 100h z 1kh z 10khz 100kh z 0a 20a 40a 60a 80a 100a 120a 140a t c =110c t c =80c i c , c o l l e c t o r c u r r e n t 1v 10v 100v 1000v 1a 10a 100a 10s 1ms dc t p =2s 50s 10ms f , switching frequency v ce , collector - emitter voltage figure 1 . collector current as a function of switching frequency ( t j ? 175 ? c, d = 0.5, v ce = 400v, v ge = 0/15v, r g = 7 ? ) figure 2 . safe operating area ( d = 0, t c = 25 ? c, t j ? 175 ? c; v ge =0/15v) p t o t , p o w e r d i s s i p a t i o n 25c 50c 75c 100c 125c 150c 0w 50w 100w 150w 200w 250w 300w i c , c o l l e c t o r c u r r e n t 25c 75c 125c 0a 20a 40a 60a 80a t c , case temperature t c , case temperature figure 3 . power dissipation as a function of case temperature ( t j ? 175 ? c) figure 4 . collector current as a function of case temperature ( v ge ? 15v, t j ? 175 ? c) i c i c
IKW50N60T trenchstop ? series q ifag ipc td vls 5 rev. 2.6 20.09.2013 i c , c o l l e c t o r c u r r e n t 0v 1v 2v 3v 0a 20a 40a 60a 80a 100a 120a 15v 7v 9v 11v 13v v g e =20v i c , c o l l e c t o r c u r r e n t 0v 1v 2v 3v 4v 0a 20a 40a 60a 80a 100a 120a 15v 13v 7v 9v 11v v g e =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5 . typical output characteristic ( t j = 25c) figure 6 . t ypical output characteristic ( t j = 175c) i c , c o l l e c t o r c u r r e n t 0v 2 v 4 v 6 v 8 v 0 a 20 a 40 a 60 a 80 a 2 5 c t j = 17 5 c v c e ( s a t ) , c o l l e c t o r - e m i t t s a t u r a t i o n v o l t a g e 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v i c =50a i c =100a i c =25a v ge , gate-emitter voltage t j , junction temperature figure 7 . typical transfer characteristic (v ce =10v) figure 8 . typical collector - emitter saturation voltage as a function of junction temperature ( v ge = 15v)
IKW50N60T trenchstop ? series q ifag ipc td vls 6 rev. 2.6 20.09.2013 t , s w i t c h i n g t i m e s 0a 20a 40 a 60a 80 a 10ns 100ns t r t d(on) t f t d(off) t , s w i t c h i n g t i m e s ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 10ns 100ns t r t d(on ) t f t d(off) i c , collector current r g , gate resistor figure 9 . typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 7 ? , dynamic test circuit in figure e) figure 10 . typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 50a, dynamic test circuit in figure e) t , s w i t c h i n g t i m e s 25c 50 c 75c 100c 12 5c 150c 10 ns 100n s t r t d(on) t f t d (off) v g e ( t h ) , g a t e - e m i t t t r s h o l d v o l t a g e -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v m in. typ. m ax. t j , junction temperature t j , junction temperature figure 11 . typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 50a, r g = 7 ? , dynamic test circuit in figure e) figure 12 . gate - emitter threshold voltage as a function of junction temperature ( i c = 0.8ma)
IKW50N60T trenchstop ? series q ifag ipc td vls 7 rev. 2.6 20.09.2013 e , s w i t c h i n g e n e r g y l o s s e s 0a 20a 40a 60a 80a 0.0mj 2.0mj 4.0mj 6.0mj 8.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , s w i t c h i n g e n e r g y l o s s e s ? ? ? ? ? ? ? ? 0 .0m j 1 .0m j 2 .0m j 3 .0m j 4 .0m j 5 .0m j 6 .0m j e ts * e off *) e on a nd e ts in clu d e lo ss e s d u e to d io d e rec o v e ry e on * i c , collector current r g , gate resistor figure 13 . typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 7 ? , dynamic test circuit in figure e) figure 14 . typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 50a, dynamic test circuit in figure e) e , s w i t c h i n g e n e r g y l o s s e s 25c 50c 75c 100c 125c 150c 0.0mj 1.0mj 2.0mj 3.0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , s w i t c h i n g e n e r g y l o s s e s 300v 350v 400v 450v 500v 550v 0m j 1m j 2m j 3m j 4m j e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15 . typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 50a, r g = 7 ? , dynamic test circuit in figure e) figure 16 . typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 50a, r g = 7 ? , dynamic test circuit in figure e)
IKW50N60T trenchstop ? series q ifag ipc td vls 8 rev. 2.6 20.09.2013 v g e , g a t e - e m i t t e r v o l t a g e 0nc 100nc 200nc 300nc 0v 5v 10v 15v 480v 120v c , c a p a c i t a n c e 0v 10v 20v 30v 40v 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17 . typical gate charge ( i c =50 a) figure 18 . typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) i c ( s c ) , s h o r t c i r c u i t c o l l e c t o r c u r r e n t 12v 14v 16v 18v 0a 100a 200a 300a 400a 500a 600a 700a 800a t s c , s h o r t c i r c u i t w i t h s t a n d t i m e 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19 . typical short circuit collector current as a function of gate- emitter voltage ( v ce ? 400v, t j ? 150 ? c) figure 20 . short circuit withstand time as a function of gate-emitter voltage ( v ce =400v , start at t j = 25c, t jmax <150c)
IKW50N60T trenchstop ? series q ifag ipc td vls 9 rev. 2.6 20.09.2013 z t h j c , t r a n s i e n t t h e r m a l i m p e d a n c e 1s 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z t h j c , t r a n s i e n t t h e r m a l i m p e d a n c e 1s 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width t p , pulse width figure 21 . igbt transient thermal impedance ( d = t p / t ) figure 22 . diode transient thermal impedance as a function of pulse width ( d = t p / t ) t r r , r e v e r s e r e c o v e r y t i m e 700a/s 800a/s 900a/s 1000a/s 0ns 50ns 100ns 150ns 200ns 250ns 300ns t j =25c t j =175c q r r , r e v e r s e r e c o v e r y c h a r g e 700a/s 800a/s 900a/s 1000a/s 0.0c 0.5c 1.0c 1.5c 2.0c 2.5c 3.0c 3.5c 4.0c t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 23 . typical reverse recovery time as a function of diode current slope ( v r =400v, i f =50a, dynamic test circuit in figure e) figure 24 . typical reverse recovery charge as a function of diode current slope ( v r = 400v, i f = 50a, dynamic test circuit in figure e) r , ( k / w ) ? , ( s ) ? ? 0.18355 7.425*10 - 2 0.12996 8.34*10 - 3 0.09205 7.235*10 - 4 0.03736 1.035*10 - 4 0.00703 4.45*10 - 5 c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2 r , ( k / w ) ? , ( s ) ? ? 0.2441 7.037*10 - 2 6.53*10 0.2007 7.312*10 - 3 0.1673 6.431*10 - 4 0.1879 4.79*10 - 5 c 1 = ? 1 / r 1 r 1 r 2 c 2 = ? 2 / r 2
IKW50N60T trenchstop ? series q ifag ipc td vls 10 rev. 2.6 20.09.2013 i r r , r e v e r s e r e c o v e r y c u r r e n t 700a/s 800a/s 900a/s 1000a/s 0a 10a 20a 30a 40a t j =25c t j =175c d i r r / d t , d i o d e p e a k r a t e o f f a l l o f r e v e r s e r e c o v e r y c u r r e n t 700a/s 800a/s 900a/s 1000a/s 0a/s -150a/s -300a/s -450a/s -600a/s -750a/s t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 25 . typical reverse recovery current as a function of diode current slope ( v r = 400v, i f = 50a, dynamic test circuit in figure e) figure 26 . typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v, i f =50a, dynamic test circuit in figure e) i f , f o r w a r d c u r r e n t 0v 1v 2v 0a 20a 40a 60a 80a 100a 120a 175c t j =25c v f , f o r w a r d v o l t a g e 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 50a i f =100a 25a v f , forward voltage t j , junction temperature figure 27 . typical diode forward current as a function of forward voltage figure 28 . typi cal diode forward voltage as a function of junction temperature
IKW50N60T trenchstop ? series q ifag ipc td vls 11 rev. 2.6 20.09.2013
IKW50N60T trenchstop ? series q ifag ipc td vls 12 rev. 2.6 20.09.2013 i r r m 90% i r r m 10% i r r m di /dt f t r r i f i,v t q s q f t s t f v r di /dt r r q =q q r r s f + t =t t r r s f + figure c. definition of diodes switching characteristics p(t) 1 2 n t ( t ) j ? 1 1 ? 2 2 n n ? t c r r r r rr figure d. thermal equivalent circuit figure a. definition of switching times figure b. definition of switching losses
IKW50N60T trenchstop ? series q ifag ipc td vls 13 rev. 2.6 20.09.2013 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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